ddrinit: d56ea12 Ranks: 1 Die size: 0 Rank size: 13 MB Full size: 13 MB Full SDRAM Width: 0 bits Primary SDRAM Width: 0 bits ECC SDRAM Width: 0 bits Device Width: 16 bits Number of Row Addresses: 65536 Number of Column Addresses: 1024 Number of Bank Addresses: 8 Bank Group Addressing: 1 Clock Cycle Time (tCK): 937 ps Minimum Clock Cycle Time (tCK min): 0 ps Maximum Clock Cycle Time (tCK max): 0 ps CAS# Latency Time (tAA min): 18740 ps Minimum Four Activate Windows Delay (tFAW): 40291 ps RAS to CAS Delay Time (tRCD min): 18740 ps Row Precharge Delay Time (tRP min): 18740 ps Active to Precharge Delay Time (tRAS min): 42165 ps Normal Refresh Recovery Delay Time (tRFC1 min): 0 ps 2x Mode Refresh Recovery Delay Time (tRFC2 min): 0 ps 4x Mode Refresh Recovery Delay Time (tRFC4 min): 0 ps Short Row Active to Row Active Delay (tRRD_S min): 10307 ps Long Row Active to Row Active Delay (tRRD_L min): 0 ps Long CAS to CAS Delay Time (tCCD_L min): 0 ps Minimum Active to Auto-Refresh Delay (tRC): 60905 ps DDRMC0: Initialized successfully within 1421212 us, 1 ranks, speed 2134 MT/s Ranks: 1 Die size: 0 Rank size: 13 MB Full size: 13 MB Full SDRAM Width: 0 bits Primary SDRAM Width: 0 bits ECC SDRAM Width: 0 bits Device Width: 16 bits Number of Row Addresses: 65536 Number of Column Addresses: 1024 Number of Bank Addresses: 8 Bank Group Addressing: 1 Clock Cycle Time (tCK): 937 ps Minimum Clock Cycle Time (tCK min): 0 ps Maximum Clock Cycle Time (tCK max): 0 ps CAS# Latency Time (tAA min): 18740 ps Minimum Four Activate Windows Delay (tFAW): 40291 ps RAS to CAS Delay Time (tRCD min): 18740 ps Row Precharge Delay Time (tRP min): 18740 ps Active to Precharge Delay Time (tRAS min): 42165 ps Normal Refresh Recovery Delay Time (tRFC1 min): 0 ps 2x Mode Refresh Recovery Delay Time (tRFC2 min): 0 ps 4x Mode Refresh Recovery Delay Time (tRFC4 min): 0 ps Short Row Active to Row Active Delay (tRRD_S min): 10307 ps Long Row Active to Row Active Delay (tRRD_L min): 0 ps Long CAS to CAS Delay Time (tCCD_L min): 0 ps Minimum Active to Auto-Refresh Delay (tRC): 60905 ps DDRMC1: Initialized successfully within 1411630 us, 1 ranks, speed 2134 MT/s Total DDR memory size 4096 MiB Memory interleaving: 4 KiB, 2-channel NOTICE: BL31: v2.6(release):v2.5-887-g9566c09d4 NOTICE: BL31: Built : 12:17:21, Feb 2 2023 U-Boot 2021.01-00012-gc358b4cc0b-dirty (Feb 19 2026 - 23:44:07 +0000) Model: KER-Automation Q7 v2.0 DRAM: 3.3 GiB CPU: Setting CPU frequency to 1188000000 (PLL mult: 43)...done. WDT: Started with servicing (120s timeout) MMC: sdhci0@10220000: 0, sdhci1@10230000: 1 Loading Environment from SPIFlash... SF: Detected w25q128fw with page size 256 Bytes, erase size 4 KiB, total 16 MiB *** Warning - bad CRC, using default environment Display: Arm Mali DP550 r0p2 malidp_setup_timings: product = DP550, reg_val = 0x10031050, HSYNCPOL = 2, VSYNCPOL = 8 MMC: no card present mmc_init: -123, time 2 Error: could not access storage. In: serial0@1750000 Out: serial Err: serial *** First boot Saving Environment to SPIFlash... SF: Detected w25q128fw with page size 256 Bytes, erase size 4 KiB, total 16 MiB Erasing SPI flash...Writing to SPI flash...done OK Net: Warning: ethernet@10200000 (eth0) using random MAC address - 42:b4:46:3a:db:80 eth0: ethernet@10200000 Hit any key to stop autoboot: 0 MMC: no card present mmc_init: -123, time 1 Card did not respond to voltage select! : -110 mmc_init: -95, time 26 No boot device available =>